(Hong Kong)
Product Summary
The IRFP250NPBF is a Fifth Generation HEXFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
Absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 30A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V:21A; (3)IDM, Pulsed Drain Current: 120A; (4)PD @TC = 25℃, Power Dissipation: 214 W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)EAS, Single Pulse Avalanche Energy: 315 mJ; (8)IAR, Avalanche Current: 30 A; (9)EAR, Repetitive Avalanche Energy: 21 mJ.
Features
Features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFP250NPBF |
International Rectifier |
MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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IRFP044 |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP044, SiHFP044 |
Other |
|
Data Sheet |
Negotiable |
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 |
IRFP044N |
|
MOSFET N-CH 55V 53A TO-247AC |
Data Sheet |
Negotiable |
|
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|
IRFP044NPBF |
International Rectifier |
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
Data Sheet |
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IRFP044PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 57 Amp |
Data Sheet |
Negotiable |
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IRFP048 |
Vishay/Siliconix |
MOSFET N-Chan 60V 70 Amp |
Data Sheet |
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