Product Summary
The IRFP140NPBF is the fifth generation HEXFET from International Rectifier which ultilize advanced processing technique to achieve the lowest possible on resistance per sulicon area.
Parametrics
IRFP140NPBF absolute maximum ratings: (1)Mounting Type: Through Hole; (2)FET Polarity: N-Channel; (3)Drain to Source Voltage (Vdss): 100V; (4)Current - Continuous Drain (Id) @ 25℃: 33A; (5)Rds On (Max) @ Id, Vgs: 52 mOhm @ 16A, 10V; (6)Input Capacitance (Ciss) @ Vds: 1400pF @ 25V; (7)Power, Max: 140W; (8)Gate Charge (Qg) @ Vgs: 94nC @ 10V; (9)Package / Case: TO-247-3.
Features
IRFP140NPBF features: (1)advanced process technology; (2)dynamic dv/dt rating; (3)175℃ operating temperature; (4)fast switching; (5)fully avalanche rated.
Diagrams
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![]() IRFP140NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC |
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![]() IRFP044 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
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![]() IRFP044, SiHFP044 |
![]() Other |
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![]() IRFP044N |
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![]() MOSFET N-CH 55V 53A TO-247AC |
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![]() Negotiable |
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![]() IRFP044NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC |
![]() Data Sheet |
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![]() IRFP044PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP048 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 70 Amp |
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